PART |
Description |
Maker |
AD7530LQ AD7531LQ |
60ns, Low Power,Single Supply, Ground-Sensing Comparator; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C 12-Bit Digital-to-Analog Converter 12位数字到模拟转换
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Sharp, Corp.
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K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
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Alliance Semiconductor
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WF128K32N-120H1I5A WF128K32N-150H1I5 WF128K32N-50H |
120ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 150ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 60ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 70ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 90ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
|
White Electronic Designs
|
CA3420 |
Op Amp, BiMOS, Low Supply Voltage, Low Input Current, 0.5MHz, V to 0V Supply Voltage
|
Intersil
|
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor, Inc.
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CA5420A CA5420AM FN1925 A5420A |
0.5MHz, Low Supply Voltage, Low Input Current BiMOS Operational Amplifiers(0.5MHz????垫??靛????杈???垫?杩???惧ぇ?? 0.5MHz/ Low Supply Voltage/ Low Input Current BiMOS Operational Amplifiers From old datasheet system Op Amp, BiMOS, Low Supply Voltage, Low Input Current, 0.5MHz, V to 0V Supply Voltage
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INTERSIL[Intersil Corporation]
|
5962-9318702H4A 5962-9318702H5C 5962-9318702HUC 59 |
Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op Amps SOT23, Micropower, Single-Supply, Rail-to-Rail I/O Op Amps Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps High-Output-Drive, Precision, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps with Shutdown Low-Cost, SOT23, Voltage-Output, High-Side Current-Sense Amplifier Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps SOT23, Rail-to-Rail, Fixed-Gain, Gain Amps/Open-Loop Op Amps X32号的SRAM模块 350MHz/250MHz, 2-Channel Video Multiplexer-Amplifiers X32号的SRAM模块 x32 SRAM Module X32号的SRAM模块
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Electronic Theatre Controls, Inc. Avago Technologies, Ltd. Bourns, Inc.
|
GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
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HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
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Hynix Semiconductor
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